2SC1815L-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
2SC1815
Unit: mm
High voltage and high current:
V_CEO = 50 V (min),
I_C = 150 mA (max)
• Excellent h_FE linearity: h_{FE (2)} = 100 (typ.)
at V_CE = 6 V, I_C = 150 mA
: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA)
= 0.95 (typ.)
• Low noise: NF = 1dB (typ.) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
Base current
Collector power dissipation
I_C
150
mA
I_B
50
mA
JEDEC
TO-92
P_C
400
mW
JEITA
SC-43
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Symbol
Test Condition
I_CBO
V_CB = 60 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_{FE (1)}
V_CE = 6 V, I_C = 2 mA
(Note)
h_{FE (2)} V_CE = 6 V, I_C = 150 mA
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
V_{BE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 10 V, I_E = −1 mA
r_bb’
f = 30 MHz
V_CE = 6 V, I_C = 0.1 mA
NF
f = 1 kHz, R_G = 10 kΩ
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
700
25 100 ⎯
⎯
0.1 0.25
V
⎯
⎯
1.0
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
⎯
50
⎯
Ω
⎯
1.0
10
dB
Note: h_FE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2007-11-01