2SC1627_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications
Voltage Amplifier Applications
2SC1627
Unit: mm
• Complementary to 2SA817
• Driver stage application of 20 to 25 watts amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
80
V
80
V
5
V
300
mA
60
mA
600
mW
150
°C
55~125
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-43
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 5 mA, I_B = 0
h_{FE (1)}
V_CE = 2 V, I_C = 50 mA
(Note)
h_{FE (2)}
V_{CE (sat)}
V_CE = 2 V, I_C = 200 mA
I_C = 200 mA, I_B = 10 mA
V_BE
V_CE = 2 V, I_C = 5 mA
f_T
V_CE = 10 V, I_C = 10 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 70~140, Y: 120~240
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
80
⎯
⎯
V
70
⎯
240
40
⎯
⎯
⎯
0.55 ⎯
⎯ 100
⎯
10
⎯
0.5
V
0.8
V
⎯ MHz
⎯
pF
1
2007-11-01