2SB907_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB907
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
2SB907
Unit: mm
• High DC current gain: h_{FE (1)} = 2000 (min) (V_CE = −2 V, I_C = −1 A)
• Low saturation voltage: V_{CE (sat)} = −1.5 V (max) (I_C = −2 A)
• Complementary to 2SD1222.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−60
V
−40
V
−5
V
−3
A
−0.3
A
1.0
W
15
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Equivalent Circuit
BASE
COLLECTOR
≈ 4.8 kΩ
≈ 300 Ω
EMITTER
1
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
2006-11-21