2SB906_10 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Application

TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
2SB906
2SB906
Audio Frequency Power Amplifier Application
Unit: mm
• Low collector saturation voltage
: V_{CE (sat)} = −1.0 V (typ.) (I_C = −3 A, I_B = −0.3 A)
• High power dissipation: P_C = 20 W (Tc = 25°C)
• Complementary to 2SD1221
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−60
V
Collector-emitter voltage
V_CEO
−60
V
Emitter-base voltage
V_EBO
−7
V
Collector current
I_C
−3
A
Base current
I_B
−0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.0
W
20
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2010-02-05