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2SB905_10 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB905
2SB905
Power Amplifier Applications
Unit: mm
⢠Complementary to SD1220
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â150
V
Collector-emitter voltage
VCEO
â150
V
Emitter-base voltage
VEBO
â6
V
Collector current
IC
â1.5
A
Base current
IB
â1.0
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
10
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
â55 to 150
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
â
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2010-02-05
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