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2SB1667_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1667(SM)
2SB1667(SM)
Audio Frequency Power Amplifier Applications
Unit: mm
⢠Low saturation voltage: VCE (sat) = â1.7 V (max)
(IC = â3 A, IB = â0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â60
V
Collector-emitter voltage
VCEO
â60
V
Emitter-base voltage
VEBO
â7
V
Collector current
IC
â3
A
Base current
IB
â0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.5
W
25
Junction temperature
Storage temperature range
Tj
150
°C
JEDEC
â
Tstg
â55 to 150
°C
JEITA
â
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10S2A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.4 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
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