2SB1667_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Triple Diffused Type

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1667(SM)
2SB1667(SM)
Audio Frequency Power Amplifier Applications
Unit: mm
• Low saturation voltage: V_{CE (sat)} = −1.7 V (max)
(I_C = −3 A, I_B = −0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−60
V
Collector-emitter voltage
V_CEO
−60
V
Emitter-base voltage
V_EBO
−7
V
Collector current
I_C
−3
A
Base current
I_B
−0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.5
W
25
Junction temperature
Storage temperature range
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10S2A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.4 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21