2SB1640_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Triple Diffused Type

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640
Audio Frequency Power Amplifier
2SB1640
Unit: mm
• Low saturation voltage: V_{CE (sat)} = −1.5 V (max)
(I_C = −2 A, I_B = −0.2 A)
• Collector metal (fin) is covered with mold region.
• Complementary to 2SD2525
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−60
V
Collector-emitter voltage
V_CEO
−60
V
Emitter-base voltage
V_EBO
−7
V
DC
Collector current
I_C
−3
A
Pulse
I_CP
−6
Base current
I_B
−0.5
A
JEDEC
―
Collector power dissipation
P_C
1.8
W
JEITA
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21