2SB1640 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Triple Diffused Type

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640
Audio Frequency Power Amplifier
2SB1640
Unit: mm
• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −2 A, IB = −0.2 A)
• Collector metal (fin) is covered with mold region.
• Complementary to 2SD2525
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
−60
V
−60
V
−7
V
−3
A
−6
−0.5
A
1.8
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CB = −60 V, I_E = 0
V_EB = −7 V, I_C = 0
I_C = −50 mA, I_B = 0
V_CE = −5 V, I_C = −0.5 A
V_CE = −5 V, I_C = −2 A
I_C = −2 A, I_B = −0.2 A
V_CE = −5 V, I_C = −0.5 A
V_CE = −5 V, I_C = −0.5 A
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
― −10 µA
―
― −10 µA
−60 ―
―
V
100 ― 320
15
―
―
― −0.1 −1.5
V
― −0.75 −1.0
V
―
9
― MHz
―
50
―
pF
Marking
B1640
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26