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2SB1617_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (Darlington) | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
2SB1617
Micro Motor Drive, Hammer Drive Applications
Power Switching Applications
Power Amplifier Applications
2SB1617
Unit: mm
⢠High DC current gain: hFE = 2000 (min) (VCE = â2 V, IC = â1 A)
⢠Low saturation voltage: VCE (sat) = â1.5 V (max)
(IC = â1 A, IB = â1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
â100
V
VCEO
â100
V
VEBO
â8
V
IC (DC)
â2
A
IC (Pulse)
â3
A
IB
â0.5
A
PC
1.3
W
Tj
150
°C
Tstg
â55 to 150
°C
JEDEC
â
JEITA
â
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
â 4 kâ¦
â 800 â¦
EMITTER
1
2006-11-21
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