2SB1457_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
2SB1457
Micro Motor Drive, Hammer Drive Applications
Power Switching Applications
Power Amplifier Applications
2SB1457
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = −2 V, I_C = −1 A)
• Low saturation voltage: V_{CE (sat)} = −1.5 V (max)
(I_C = −1 A, I_B = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−100
V
V_CEO
−100
V
V_EBO
−8
V
I_{C (DC)}
−2
A
I_{C (Pulse)}
−3
A
I_B
−0.5
A
P_C
900
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
2009-12-21