2SB1457_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (Darlington)

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
2SB1457
Micro Motor Drive, Hammer Drive Applications
Power Switching Applications
Power Amplifier Applications
2SB1457
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = −2 V, I_C = −1 A)
• Low saturation voltage: V_{CE (sat)} = −1.5 V (max)
(I_C = −1 A, I_B = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−100
V
V_CEO
−100
V
V_EBO
−8
V
I_{C (DC)}
−2
A
I_{C (Pulse)}
−3
A
I_B
−0.5
A
P_C
900
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
2006-11-21