2SB1067_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications

2SB1067
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Industrial Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = −2 V, I_C = −1 A)
• Low saturation voltage: V_{CE (sat)} = −1.5 V (max)
(I_C = −1 A, I_B = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−80
V
Collector-emitter voltage
V_CEO
−80
V
Emitter-base voltage
V_EBO
−8
V
Collector current
I_C
−2
A
Base current
I_B
−0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.5
W
10
JEDEC
JEITA
―
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
2009-12-21