2SB1016A_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: V_CEO = −100 V
• Low collector-emitter saturation voltage: V_{CE (sat)} = −2.0 V (max)
• Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−100
V
Collector-emitter voltage
V_CEO
−100
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−5
A
Base current
I_B
−0.5
A
Collector power dissipation
(Tc = 25°C)
P_C
30
W
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21