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2SA970_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Low Noise Audio Amplifier Applications | |||
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2SA970
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
⢠Low noise: NF = 3dB (typ.) RG = 100 â¦, VCE = â6 V, IC = â100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 kâ¦, VCE = â6 V, IC = â100 μA,
f = 1 kHz
⢠High DC current gain: hFE = 200~700
⢠High breakdown voltage: VCEO = â120 V
⢠Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â120
V
Collector-emitter voltage
VCEO
â120
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â100
mA
Base current
IB
â20
mA
Collector power dissipation
PC
300
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-5F1B
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = â120 V, IE = 0
IEBO
VEB = â5 V, IC = 0
V (BR) CEO IC = â1 mA, IB = 0
hFE
VCE = â6 V, IC = â2 mA
(Note)
VCE (sat) IC = â10 mA, IB = â1 mA
VBE
VCE = â6 V, IC = â2 mA
fT
VCE = â6 V, IC = â1 mA
Cob
VCB = â10 V, IE = 0, f = 1 MHz
VCE = â6 V, IC = â0.1 mA, f = 10 Hz,
RG = 10 kΩ
NF
VCE = â6 V, IC = â0.1 mA, f = 1 kHz,
RG = 10 kΩ
VCE = â6 V, IC = â0.1 mA, f = 1 kHz,
RG = 100 Ω
Min Typ. Max Unit
â¯
⯠â0.1 μA
â¯
⯠â0.1 μA
â120 â¯
â¯
V
200
â¯
700
â¯
â¯
â0.3
V
⯠â0.65 â¯
V
⯠100 ⯠MHz
â¯
4.0
â¯
pF
â¯
â¯
6
â¯
â¯
2
dB
â¯
3
â¯
Note: hFE classification GR: 200~400, BL: 350~700
1
2007-11-01
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