2SA970-GR Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA970
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
• Low noise :NF = 3dB (typ.) R_G = 100 Ω, V_CE = −6 V, I_C = −100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) R_G = 1 kΩ, V_CE = −6 V, I_C = −100 μA,
f = 1 kHz
• High DC current gain: h_FE = 200~700
• High breakdown voltage: V_CEO = −120 V
• Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−120
V
−120
V
−5
V
−100
mA
−20
mA
300
mW
125
°C
−55~125
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
I_CBO
V_CB = −120 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −1 mA, I_B = 0
h_FE
(Note)
V_CE = −6 V, I_C = −2 mA
V_{CE (sat)}
V_BE
f_T
C_ob
NF
I_C = −10 mA, I_B = −1 mA
V_CE = −6 V, I_C = −2 mA
V_CE = −6 V, I_C = −1 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
V_CE = −6 V, I_C = −0.1 mA, f = 10 Hz,
R_G = 10 kΩ
V_CE = −6 V, I_C = −0.1 mA, f = 1 kHz,
R_G = 10 kΩ
V_CE = −6 V, I_C = −0.1 mA, f = 1 kHz,
R_G = 100 Ω
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−120 ⎯
⎯
V
200
⎯
700
⎯
⎯
−0.3
V
⎯ −0.65 ⎯
V
⎯ 100 ⎯ MHz
⎯
4.0
⎯
pF
⎯
⎯
6
⎯
⎯
2
dB
⎯
3
⎯
Note: h_FE classification GR: 200~400, BL: 350~700
1
2007-11-01