2SA950_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA950
2SA950
Audio Power Amplifier Applications
Unit: mm
• High h_FE: h_FE = 100~320
• 1 W output applications
• Complementary to 2SC2120
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−35
V
Collector-emitter voltage
V_CEO
−30
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−800
mA
Base current
I_B
−160
mA
Collector power dissipation
P_C
600
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = −35 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −10 mA, I_B = 0
h_{FE (1)}
V_CE = −1 V, I_C = −100 mA
(Note)
h_{FE (2)} V_CE = −1 V, I_C = −700 mA
V_{CE (sat)} I_C = −500 mA, I_B = −20 mA
V_BE
V_CE = −1 V, I_C = −10 mA
f_T
V_CE = −5 V, I_C = −10 mA
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 100~200, Y: 160~320
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−30 ⎯
⎯
V
100
⎯
320
35
⎯
⎯
⎯
⎯
−0.7
V
−0.5
⎯
−0.8
V
⎯ 120 ⎯ MHz
⎯
19
⎯
pF
1
2007-11-01