2SA949_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA949
Driver-Stage Audio Amplifier Applications
High-Voltage Switching Applications
2SA949
Unit: mm
• High breakdown voltage: V_CEO = −150 V
• Low output capacitance: C_ob = 5.0 pF (max)
• High transition frequency: f_T = 120 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−150
V
Collector-emitter voltage
V_CEO
−150
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−50
mA
Base current
I_B
5
mA
Collector power dissipation
P_C
800
mW
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TO-92MOD
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09