2SA562TM_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA562TM
2SA562TM
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
• Excellent h_FE linearity: h_{FE (2)} = 25 (min)
at V_CE = −6 V, I_C = −400 mA
• 1 watt amplifier application.
• Complementary to 2SC1959.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−35
V
−30
V
−5
V
−500
mA
−100
mA
500
mW
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CB = −35 V, I_E = 0
V_EB = −5 V, I_C = 0
h_{FE (1)}
V_CE = −1 V, I_C = −100 mA
(Note)
h_{FE (2)}
V_CE = −6 V, I_C = −400 mA
(Note)
V_{CE (sat)}
V_BE
f_T
C_ob
I_C = −100 mA, I_B = −10 mA
V_CE = −1 V, I_C = −100 mA
V_CE = −6 V, I_C = −20 mA
V_CB = −6 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 70~140, Y: 120~240
h_{FE (2)} classification O: 25 (min), Y: 40 (min)
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
70
⎯
240
25
⎯
⎯
⎯ −0.1 −0.25 V
⎯
−0.8 −1.0
V
⎯ 200 ⎯ MHz
⎯
13
⎯
pF
1
2007-11-01