2SA2220 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon PNP Epitaxial Type

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2220
2SA2220
○ Audio Frequency Amplifier Applications
Unit: mm
• High collector voltage
• Small collector output capacitance
• High transition frequency
• Complementary to 2SC6140
: V_CEO = －160 V
: C_ob = 17 pF (typ.)
: f_T = 100 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
-160
V
Collector-emitter voltage
V_CEO
-160
V
Emitter-base voltage
V_EBO
-6
V
Collector current
DC
I_C
-1.5
A
Pulse
I_CP
-2.5
A
Base current
I_B
-0.5
A
Collector power dissipation
Pc
1.8
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-10T1A
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Weight: 1.5 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-10-15