2SA2154MFV Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – General-Purpose Amplifier Applications

2SA2154MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154MFV
General-Purpose Amplifier Applications
• High voltage and high current
: V_CEO = −50 V, I_C = −150 mA (max)
• Excellent h_FE linearity
: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA) = 0.95 (typ.)
• High h_{FE :} h_FE = 120~400
• Complementary to 2SC6026MFV
• Lead (Pb) - free
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−50
V
−50
V
−5
V
−150
mA
−30
mA
150*
mW
150
°C
−55~150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4 0.4
Unit: mm
Unit: mm
1.2 ± 0.05
0.80 ± 0.05
1
1
3
2
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
1
2005-07-14