2SA2154CT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – General-Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154
2SA2154
General-Purpose Amplifier Applications
• High voltage and high current
: V_CEO = −50 V, I_C = −100 mA (max)
• Excellent h_FE linearity
: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA) = 0.95 (typ.)
• High h_{FE :} h_FE = 120~400
• Complementary to 2SC6026
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
0.1±0.05
Emitter-base voltage
V_EBO
−5
V
Collector current
Base current
Collector power dissipation
I_C
−100
mA
I_B
−30
mA
P_C
50
mW
1.BASE
2.EMITTER
fSM
3.COLLECTOR
Junction temperature
Storage temperature range
T_j
150
°C
JEDEC
―
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-1E1A
reliability significantly even if the operating conditions (i.e.
Weight: 0.6 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
I_CBO
V_CB = −50 V, I_E = 0
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I_EBO
h_FE (Note)
V_{CE (sat)}
f_T
C_ob
V_EB = −5 V, I_C = 0
V_CE = −6 V, I_C = −2 mA
I_C = −100 mA, I_B = −10 mA
V_CE = −10 V, I_C = −1 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_FE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
120
⎯
400
⎯
⎯ −0.18 −0.3
V
80
⎯
⎯ MHz
⎯
1.6
⎯
pF
Marking
Type Name
h_FE Rank
8F
1
2007-11-01