2SA2154 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154
2SA2154
General-Purpose Amplifier Applications
• High voltage and high current
: V_CEO = −50 V, I_C = −100 mA (max)
• Excellent h_FE linearity
: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA) = 0.95 (typ.)
• High h_{FE :} h_FE = 120~400
• Complementary to 2SC6026
• Lead (Pb) free
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
−50
V
−50
V
−5
V
−100
mA
−30
mA
50
mW
150
°C
−55~150
°C
0.1±0.05
1.BASE
2.EMITTER
fSM
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
I_CBO
V_CB = −50 V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = −5 V, I_C = 0
DC current gain
h_FE (Note) V_CE = −6 V, I_C = −2 mA
Collector-emitter saturation voltage
V_{CE (sat)} I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CE = −10 V, I_C = −1 mA
Collector output capacitance
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_FE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
h_FE Rank
Min Typ. Max Unit
⎯
⎯ −0.1 µA
⎯
⎯ −0.1 µA
120 ⎯ 400 ⎯
⎯ −0.18 −0.3
V
80
⎯
⎯ MHz
⎯
1.6
⎯
pF
8F
1
2005-03-23