2SA2097_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Swtching Applications DC-DC Converter Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications
DC-DC Converter Applications
2SA2097
Unit: mm
• High DC current gain: h_FE = 200 to 500 (I_C = −0.5 A)
• Low collector-emitter saturation: V_{CE (sat)} = −0.27 V (max)
• High-speed switching: t_f = 55 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
−50
V
−50
V
−7
V
−5
A
−10
−0.5
A
1
W
20
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09