2SA2097 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Swtching Applications DC-DC Converter Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications
DC-DC Converter Applications
2SA2097
Unit: mm
· High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
· Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
· High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Pc
T_j
T_stg
Rating
Unit
-50
V
-50
V
-7
V
-5
A
-10
-0.5
A
1
W
20
150
°C
-55 to 150
°C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter brakedown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
t_r
t_stg
t_f
V_CB = -50 V, I_E = 0
V_EB = -7 V, I_C = 0
I_C = -10 mA, I_B = 0
V_CE = -2 V, I_C = -0.5 A
V_CE = -2 V, I_C = -1.6 A
I_C = -1.6 A, I_B = -53 mA
I_C = -1.6 A, I_B = -53 mA
See Figure 1 circuit diagram
V_CC ~- -24 V, R_L = 15 W
I_B1 = -I_B2 = -53 mA
Min Typ. Max Unit
¾
¾ -100 nA
¾
¾ -100 nA
-50
¾
¾
V
200
¾
500
100
¾
¾
¾
¾ -0.27 V
¾
¾ -1.10 V
¾
63
¾
¾
280
¾
ns
¾
55
¾
1
2002-08-21