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2SA2061 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SA2061
Unit: mmç
⢠High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
⢠Low collector-emitter saturation voltage: VCE (sat) = â0.19 V (max)
⢠High-speed switching: tf = 40 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
t = 10 s
DC
Junction temperature
Storage temperature range
VCBO
â20
V
VCEO
â20
V
VEBO
â7
V
IC
â2.5
A
ICP
â4.0
IB
â250
mA
PC
1000
mW
(Note)
625
Tj
150
°C
Tstg
â55 to 150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
â
JEITA
â
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = â20 V, IE = 0
VEB = â7 V, IC = 0
IC = â10 mA, IB = 0
VCE = â2 V, IC = 0.5 A
VCE = â2 V, IC = â1.6 A
IC = â1.6 A, IB = â53 mA
IC = â1.6 A, IB = â53 mA
VCB = â10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC â â12 V, RL = 7.5 â¦
âIB1 = IB2 = â53 mA
Min Typ. Max Unit
â
â â100 nA
â
â â100 nA
â20
â
â
V
200
â
500
100
â
â
â
â â0.19 V
â
â â1.10 V
â
28
â
pF
â
70
â
â
150
â
ns
â
40
â
1
2001-10-29
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