2SA2058 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SA2058
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
−20
V
V_CEO
−10
V
V_EBO
I_C
I_CP
I_B
−7
V
−1.5
A
−2.5
−150
mA
P_C
500
mW
(Note)
750
T_j
150
°C
T_stg
−55 to 150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = −20 V, I_E = 0
V_EB = −7 V, I_C = 0
I_C = −10 mA, I_B = 0
V_CE = −2 V, I_C = −0.2 A
V_CE = −2 V, I_C = −0.6 A
I_C = −0.6 A, I_B = −20 mA
I_C = −0.6 A, I_B = −20 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
See Figure 1 circuit diagram.
V_CC ∼− −6 V, R_L = 10 Ω
−I_B1 = I_B2 = −20 mA
Min Typ. Max Unit

 −100 nA

 −100 nA
−10


V
200

500
125



 −0.19 V

 −1.10 V

12

pF

50


115

ns

25

1
2001-10-29