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2SA2056_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2056
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)
• High-speed switching: tf = 90 ns (typ.)
2SA2056
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−7
V
Collector current
Base current
Collector power
dissipation
DC
Pulse
t = 10 s
DC
IC
−2.0
A
ICP
−3.5
IB
−200
mA
PC
1000
mW
(Note 1)
625
JEDEC
JEITA
TOSHIBA
―
―
2-3S1C
Junction temperature
Tj
150
°C
Weight: 0.01 g (typ.)
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09