|
2SA1972_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications | |||
|
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1972
High-Voltage Switching Applications
2SA1972
Unit: mm
⢠High breakdown voltage: VCEO = â400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â400
V
Collector-emitter voltage
VCEO
â400
V
Emitter-base voltage
VEBO
â7
V
Collector current
DC
Pulse
IC
â0.5
A
ICP
â1
Base current
IB
â0.25
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
â55 to 150
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
â
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
|
▷ |