2SA1971_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1971
High-Voltage Switching Applications
2SA1971
Unit: mm
• High breakdown voltage: V_CEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Ta = 25°C
(Note 1)
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
−400
V
−400
V
−7
V
−0.5
A
−1
−0.25
A
500
mW
1000
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate 250 mm² × 0.8 t
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21