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2SA1955_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – General Purpose Amplifier Applications Switching and Muting Switch Application | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955
General Purpose Amplifier Applications
Switching and Muting Switch Application
2SA1955
Unit: mm
⢠Low saturation voltage: VCE (sat) (1) = â15 mV (typ.)
@IC = â10 mA/IB = â0.5 mA
⢠Large collector current: IC = â400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â15
V
Collector-emitter voltage
VCEO
â12
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â400
mA
Base current
IB
â50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
JEDEC
â
Tstg
â55~125
°C
JEITA
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-2H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 2.4 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
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