2SA1955FV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – General Purpose Amplifier Applications Switching and Muting Switch Application

2SA1955FV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications
Switching and Muting Switch Application
• Low saturation voltage: V_{CE (sat)} (1) = −15 mV (typ.)
@I_C = −10 mA/I_B = −0.5 mA
• Large collector current: I_C = −400 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−15
V
Collector-emitter voltage
V_CEO
−12
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−400
mA
Base current
I_B
−50
mA
Collector power dissipation
P_C
150 *
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015g (typ.)
Marking
1
2004-06-07