2SA1955F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – General Purpose Amplifier Applications Switching and Muting Switch Application

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955F
2SA1955F
General Purpose Amplifier Applications
Switching and Muting Switch Application
Unit: mm
• Low saturation voltage: V_{CE (sat)} (1) = −15 mV (typ.)
@I_C = −10 mA/I_B = −0.5 mA
• Large collector current: I_C = −400 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Marking
GA
Type Name
h_FE Rank
Rating
Unit
−15
V
−12
V
−5
V
−400
mA
−50
mA
100
mW
125
°C
−55~125
°C
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
1
2005-01-14