2SA1943_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
2SA1943
Unit: mm
• High collector voltage: VCEO = −230 V (min)
• Complementary to 2SC5200
• Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
−230
V
−230
V
−5
V
−15
A
−1.5
A
150
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CB = −230 V, I_E = 0
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −50 mA, I_B = 0
h_{FE (1)}
V_CE = −5 V, I_C = −1 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_CE = −5 V, I_C = −7 A
I_C = −8 A, I_B = −0.8 A
V_BE
V_CE = −5 V, I_C = −7 A
f_T
V_CE = −5 V, I_C = −1 A
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
―
― −5.0 µA
―
― −5.0 µA
−230 ―
―
V
55
― 160
35
60
―
― −1.5 −3.0
V
― −1.0 −1.5
V
―
30
― MHz
― 360 ―
pF
1
2004-07-07