2SA1942_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1942
Power Amplifier Applications
2SA1942
Unit: mm
• High breakdown voltage: V_CEO = −160 V (min)
• Complementary to 2SC5199
• Recommended for 80-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−160
V
Collector-emitter voltage
V_CEO
−160
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−12
A
Base current
I_B
−1.2
A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
P_C
120
W
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09