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2SA1941-R Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
⢠High breakdown voltage: VCEO = â140 V (min)
⢠Complementary to 2SC5198
⢠Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â140
V
Collector-emitter voltage
VCEO
â140
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â10
A
Base current
IB
â1
A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC
100
W
Tj
150
°C
Tstg
â55 to 150
°C
JEDEC
JEITA
TOSHIBA
â
â
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-11-02
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