2SA1937 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1937
High-Voltage Switching Applications
2SA1937
Unit: mm
• High voltage: V_CEO = −600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−600
V
Collector-emitter voltage
V_CEO
−600
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
Pulse
I_C
−0.5
A
I_CP
−1
Base current
I_B
−0.25
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1
W
10
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7B1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21