2SA1933 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

2SA1933
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1933
High-Current Switching Applications
Industrial Applications
Unit: mm
• Low collector saturation voltage: V_{CE (sat)} = −0.4 V (max) (I_C = −2 A)
• High-speed switching time: t_stg = 1.0 μs (typ.)
• Complementary to 2SC5175
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−60
V
V_CEO
−50
V
V_EBO
−7
V
I_C
−5
A
I_B
−1
A
P_C
1.8
W
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09