2SA1932_06 Datasheet, PDF (1/5 Pages) –

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1932
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1932
Unit: mm
• High transition frequency: f_T = 70 MHz (typ.)
• Complementary to 2SC5174
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−230
V
Collector-emitter voltage
V_CEO
−230
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−1
A
Base current
I_B
−0.1
A
Collector power dissipation
Junction temperature
Storage temperature range
P_C
1.8
W
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09