2SA1931 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Current Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
2SA1931
High-Current Switching Applications
Unit: mm
• Low saturation voltage: V_{CE (sat)} = −0.4 V (max)
• High-speed switching time: t_stg = 1.0 μs (typ.)
• Complementary to 2SC4881
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−60
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−7
V
Collector current
I_C
−5
A
Base current
I_B
−1
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
2.0
W
20
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
JEITA
―
SC-67
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-13