2SA1926_10 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1926
Power Amplifier Applications
Power Switching Applications
2SA1926
Unit: mm
• Low collector saturation voltage: V_{CE (sat)} = −0.17 V (max)
(I_C = −1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−80
V
Collector-emitter voltage
V_CEO
−80
V
Emitter-base voltage
V_EBO
−8
V
Collector current
I_C
−3
A
Base current
I_B
−1
A
Collector power dissipation
Junction temperature
Storage temperature range
P_C
1000
mW
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note 1: Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-7D101A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.2 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-09