2SA1925_10 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1925
High-Voltage Switching Applications
• High breakdown voltage: V_CEO = −400 V
2SA1925
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−400
V
Collector-emitter voltage
V_CEO
−400
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
Pulse
I_C
−0.5
A
I_CP
−1
Base current
I_B
−0.25
A
Collector power dissipation
Junction temperature
Storage temperature range
P_C
1.3
W
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note 1: Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-8M1A
high temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-09