2SA1924_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1924
High-Voltage Switching Applications
2SA1924
Unit: mm
• High breakdown voltage: V_CEO = −400 V
• Low saturation voltage: V_{CE (sat)} = −1 V (max)
(I_C = −100 mA, I_B = −10 mA)
• Collector metal (fin) is fully covered with mold resin.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−400
V
Collector-emitter voltage
V_CEO
−400
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
Pulse
I_C
−0.5
A
I_CP
−1
Base current
I_B
−0.25
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.5
W
10
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09