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2SA1891_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1891
Power Amplifier Applications
Power Switching Applications
2SA1891
Unit: mm
⢠Low collector-emitter saturation voltage: VCE (sat) = â0.5 V (max)
(IC = â1 A)
⢠High collector power dissipation: PC = 1.3 W (Ta = 25 °C)
⢠High-speed switching time: tstg = 300 ns (typ.)
⢠Complementary to 2SC5028
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
â60
V
â50
V
â6
V
â2
A
â4
â0.2
A
1.3
W
150
°C
â55 to 150
°C
JEDEC
â
JEITA
â
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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