2SA1873-GR Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1873
2SA1873
Audio Frequency General Purpose Amplifier Applications
• Small package (dual type)
• High voltage and high current: V_CEO = −50 V, I_C = −150 mA (max)
• High h_FE
• Excellent h_FE linearity: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA)
= 0.95 (typ.)
• Complementary to 2SC4944
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
−50
V
−50
V
−5
V
−150
mA
Base current
I_B
−30
mA
Collector power dissipation
P_C
200
mW
(Note 1)
Junction temperature
T_j
125
°C
JEDEC
―
Storage temperature range
T_stg
−55~125
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2L1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 6.2 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
I_CBO
V_CB = −50 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
h_FE
(Note)
V_CE = −6 V, I_C = −2 mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_{CE (sat)}
f_T
C_ob
I_C = −100 mA, I_B = −10 mA
V_CE = −10 V, I_C = −1 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Note 2: h_FE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
1
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
120
⎯
400
⎯
−0.1 −0.3
V
80
⎯
⎯ MHz
⎯
4
7
pF
2007-11-01