2SA1869_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1869
Power Amplifier Applications
2SA1869
Unit: mm
• Good linearity of h_FE
• Complementary to 2SC4935
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−5
V
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
I_C
−3
A
I_B
−0.3
A
P_C
10
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
―
SC-67
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09