2SA1832FT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio frequency General Purpose Amplifier Applications

2SA1832FT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832FT
Audio frequency General Purpose Amplifier Applications
Unit: mm
· High voltage: VCEO = −50 V
· High current: IC = −150 mA (max)
· High hFE: hFE = 120 to 400
· Excellent hFE linearity
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
· Complementary to 2SC4738F
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
-50
V
-50
V
-5
V
-150
mA
-30
mW
100
mW
125
°C
-55 to 125
°C
Marking
Type Name
h_FE Rank
SY
JEDEC
JEITA
TOSHIBA
―
―
2-1B1A
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = -50 V, I_E = 0
I_EBO
V_EB = -5 V, I_C = 0
h_FE
(Note)
V_CE = -6 V, I_B = -2 mA
V_{CE (sat)} I_C = -100 mA, I_B = -10 mA
f_T
V_CE = -10 V, I_C = -1 mA
C_ob
V_CB = -10 V, I_E = 0, f = 1 MHz
Note: h_FE Classification
( ) Marking symbol
Y (Y): 120 to 140, GR (G): 200 to 400
1
Min Typ. Max Unit
¾
¾ -0.1 mA
¾
¾ -0.1 mA
120
¾
400
―
-0.1 -0.3
V
80
¾
¾ MHz
¾
4
7
pF
2002-01-16