2SA1832-Y Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

2SA1832
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: V_CEO = −50 V, I_C = −150 mA (max)
• Excellent h_FE linearity: h_FE (I_C = −0.1 mA)/ h_FE (I_C = −2 mA)
= 0.95 (typ.)
• High h_FE: h_FE = 70~400
• Complementary to 2SC4738
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−50
V
V_CEO
−50
V
V_EBO
−5
V
I_C
−150
mA
I_B
−30
mA
P_C
100
mW
T_j
125
°C
T_stg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
―
2-2H1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 2.4 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
h_FE
(Note)
V_CE = −6 V, I_C = −2 mA
V_{CE (sat)}
f_T
C_ob
I_C = −100 mA, I_B = −10 mA
V_CE = −10 V, I_C = −1 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_FE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
70
⎯
400
⎯
−0.1 −0.3
V
80
⎯
⎯ MHz
⎯
4
7
pF
Marking
1
2007-11-01