2SA1680_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1680
Power Amplifier Applications
Power Switching Applications
2SA1680
Unit: mm
• Low collector-emitter saturation voltage: V_{CE (sat)} = −0.5 V (max)
(I_C = −1 A)
• High collector power dissipation: P_C = 900 mW (Ta = 25 °C)
• High-speed switching: t_stg = 300 ns (typ.)
• Complementary to 2SC4408.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−60
V
−50
V
−6
V
−2
A
−0.2
A
900
mW
150
°C
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21