2SA1620_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency Amplifier Applications

2SA1620
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1620
Audio Frequency Amplifier Applications
Complementary to 2SC4209
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−80
V
−80
V
−5
V
−300
mA
−60
mA
200
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
V_CB = −50 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −5 mA, I_B = 0
h_{FE (1)}
(Note)
V_CE = −2 V, I_C = −50 mA
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = −2 V, I_C = −200 mA
I_C = −200 mA, I_B = −20 mA
V_CE = −2 V, I_C = −5 mA
V_CE = −10 V, I_C = −10 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_FE classification, O: 70~140, Y: 120~240
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−80 ⎯
⎯
V
70
⎯
240
40
⎯
⎯
⎯
−0.55 ⎯
70 100
⎯
14
⎯
−0.4
V
−0.8
V
⎯ MHz
⎯
pF
Marking
1
2007-11-01